Sanyo EP92H User Manual download pdf (Page 18)

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number

of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.

SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data

due to the inclusion of high pixel count cameras in this equipment.

3534

Handling More Data Even Faster. Supporting Needs for Higher Performance with

Peripheral Components

SANYO's Lineup of High-Reliability

Discrete Devices

Low noise, High gain transistors

=20 GHz)

SBFP405M, SBFP420M...etc.

Low insertion loss MMIC /

High isolation MMIC

SBS804...etc.

ECH8601, FTD2017A...etc.

VEC2301, SCH2602, ECH8603

MCH6307...etc.

TF218TH, TF208TH, TF202(SSFP)...etc.

EC3H02B, 2SC5538, 2SC5539...etc.

EC2D01B, SB0203EJ...etc.

Low phase noise transistors

EC3H02B, EC3H09B...etc.

Precise interface control MOSFETs

5LN01S, 5LP01S

MCH6614(2 in 1)...etc.

MCH5809, CPH5809(MOS + SBD)...etc.

Bipolar Transistor for LNA

Devices for Li-ion batteries

Junction FETs for ECM

Devices for CCD camera module

Bipolar transistor for VCO

Power management switches

SPM3211, SPM3212,

SPM3215, SPM3218...etc.

Ultralow on-resistance MOSFET series

Schottky barrier diodes

Ultrathin package: VTFP

Ultrahigh-frequency transistors

Complex devices

GaAs MMIC products for antenna

switches and local switches

Transistors for LCD backlight circuits

Ultralow on-resistance MOS devices for power management

Low VF/IR Schottky barrier diodes for power management

Ultralow on-resistance MOS device generation map

Low and medium output MOS device development roadmap

RON ¥ A [mΩ ¥ mm

]

Cell density [Mcell/inch

]

(on)

2.5 mΩ

10 µm

1.1 µm

100

270

240

210

180

150

120

J5 T1 T2 T3 T4 T5

1998 2000 2002 2004 2005 2006

5 µm

0.8 µm

3 µm

0.55 µm

2.5 µm

0.35 µm

1.8 µm

0.25 µm

1.3 µm

0.18 µm

Cell pitch

Design rule

Low voltage

drive

=4V

2.5V

1.5V

1.8V

Low V

Schottky barrier diode development roadmap

30V 1A 0.45V

30V 0.7A 0.55V

PCP

15V 1A 0.4V

CPH

Performance

New generation

4pin ECSP

1999

2000

2001

2002

2003

2004

2005

2006

2007

[Year]

Befor

1998

15V 1A 0.4V

MCPH

15V 1A 0.4V

SCH

ECH

15V 2A 0.4V×2

SOP-WL

Parallel, Twin SBD

MOS + SBD

TR + SBD

Compound

product

deployment

(on)

15 mΩ

(on)

5.3 mΩ

(on)

3.8 mΩ

(on)

2.8 mΩ

Cell density

Low capacity

process

(on)

3.2 mΩ

RON ¥ A

– I comparison data for earlier and low-V

devices Schottky barrier diodes

2003 2004 2005 2006 2007

High

performance

High

performance

Miniaturization

T4: 16 million cells per

square inch)

Wireless package

High side switches

Miniaturization

Added functionality

Reduced on-resistance/reduced voltage drive

Multi Function

Differentiation

Device Device

MOSFET

¥ Deployment to miniature thin-form

products; VEC8, SCH6, ECSP



¥ Wireless package technology

ECH8, TSSOP-WL, FlipFET

¥ Higher power and lower cost

ExPD

¥ Built-in driver MOSFETs

¥ Trench low side

¥ Back gate switches for lithium

battery charging and discharging

¥ High side switches and condenser

microphones for cell phones

ExPD

¥ Low Side

¥ Drivers (high voltage/

low voltage)

¥ PicoLogic

SB10-015C

SBS010M

Reduced by

0.2 V

IF-VF(Comparison with earlier SANYO products)

1.0

0.1

0.01

[A]

[V]

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Contributes to

in end products!

Low forward voltage

Miniature thin-form

package

New Product

Earlier Product

1st Generation

SBD

2nd Generation

Low V

+ Ti barrier

3rd Generation

Low V

- high-density

sub + Ti barrier

Low I

- high-density

sub + MO barrier

Low V

- Low I

New structure Schottky

barrier diode

150¡C

guaranteed

Wireless

Low VF - Low IR

Barrier metal

inspection

¥ Trench structure (T4) -> (T5)

¥ Increased speed and further

improved ultralow on-resistance

¥ Reduced voltage drive

(from 1.5 to 1.2 V)

¥ Shorter turnaround times

(fewer masks)

¥ Trench structure (T3/4) deployment

(T3: 10 million, T4: 16 million cells per

square inch)

¥ Shallow trench technology established

¥ High ESD resistance technology

established

¥ Lineup covering 12 to 200 V

¥ Low on-resistance process

established (T2 trench process)

increased

efficiency,

miniaturization,

and thinner

form factors

[Year]

(sat) - mΩ

1998

1999

2000

2001

2002

2003

2004

2005

2006

[Year]

Before

1997

160

140

120

100

Cell density

65Kcell/inch

(sat)

140mΩ

(sat)

70mΩ

(sat)

50mΩ

(sat)

35mΩ

Cell density

144cell/inch

Cell density

144cell/inch

Low resistance

of collector layer

50%

down

30%

down

30%

down

=100 to 400, Width=300

=200 to 560, Width=360

=250 to 400, Width=150

Very low saturation voltage

High switching speed

Small and high power package

Ultra low saturation voltage

Narrow width of h

High switching speed

Ultralow saturation voltage transistor development roadmap

High

performance

Small

Low cost

High performance

PCP CPH MCPH ECH SCH

2002 2003 2004 2005 2006 2007

Performance/functionality — Miniaturization

ECSP SOP-WL

High performance

1st Generation

MBIT

2nd Generation

MBIT-II

3rd Generation

MBIT-III

4th Generation

High-speed SW

MBIT-IV

MBIT-IIs

(Single-layer

electrode)

High hFE support - ECSP

package

High voltage (80 V and over)

- High output support

PicoTR surface mounting

package deployment

Support for hFE1 ranking

MCPH, PCP, and TP leads

Package deployment -

Compound CPH deployment

Low saturation voltage transistor generation map

LCD backlight ultralow saturation voltage transistors

High performance/low cost

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Sanyo EP92H User Manual Page 18

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